发明名称 |
Method of forming gates in semiconductor devices |
摘要 |
Disclosed is the method of forming the gate in the semiconductor device. The present method can prevent abnormal oxidization and lifting at the interface of the stack gate consisting of polysilicon and a metal and can be applied to even the single metal gate, by replacing a re-oxidization process for recovering damage of the gate oxide film generated in the gate patterning process with the oxygen plasma treatment.
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申请公布号 |
US6987056(B2) |
申请公布日期 |
2006.01.17 |
申请号 |
US20030615478 |
申请日期 |
2003.07.08 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LIM KWAN YONG;CHO HEUNG JAE;AHN TAE HANG |
分类号 |
H01L21/3205;H01L21/316;H01L21/324;H01L21/336;H01L21/4763;H01L29/49;H01L29/51 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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