发明名称 Tapered angle magnetoresistive element and nonvolatile solid-state memory using the same
摘要 The present invention provides a magnetoresistive element in which a first magnetic layer and a second magnetic layer whose coercive forces are different, and a non-magnetic layer that is disposed between the magnetic layers, wherein edges of the magnetoresistive element are tapered, or a magnetoresistive element in which a first magnetic layer and a second magnetic layer, and a non-magnetic layer that is disposed between the magnetic layers, wherein the coercive force of the first magnetic layer is larger than the coercive force of the second magnetic layer, and wherein relation between a base area S 1 of the first magnetic layer and a base area S 2 of the second magnetic layer is S 1 >S 2.
申请公布号 US6987652(B2) 申请公布日期 2006.01.17
申请号 US20020260065 申请日期 2002.10.01
申请人 CANON KABUSHIKI KAISHA 发明人 KOGANEI AKIO
分类号 G11B5/39;H01L27/105;G11C11/15;H01L21/8246;H01L43/08 主分类号 G11B5/39
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