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发明名称
半导体装置及其制造方法
摘要
一种半导体装置的制造方法,包括如下步骤:在基板上形成矽晶核,沈积第一非晶矽,沈积第二非晶矽,并藉着使晶核在固相中生长,而使第一非晶矽及第二非晶矽结晶。
申请公布号
TW200603388
申请公布日期
2006.01.16
申请号
TW094116272
申请日期
2005.05.19
申请人
尔必达存储器股份有限公司
发明人
小松宪代;相宗史记;广田俊幸
分类号
H01L27/10
主分类号
H01L27/10
代理机构
代理人
周良谋;周良吉
主权项
地址
日本
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