发明名称 METHOD FOR FORMING PATTERN AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A method for forming a pattern is disclosed which comprises a step wherein a fluid film is made from a material with fluidity, a step wherein a pressing surface of a pressing member which has at least one of a projected portion and a recessed portion is pressed against the fluid film so that the shape of at least one of the projected portion and the recessed portion is transferred onto the fluid film, a step wherein the fluid film is heated to a first temperature while pressing the pressing surface against the fluid film, so that the fluid film on which the shape of at least one of the projected portion and the recessed portion is transferred is solidified into a solid film, and a step wherein the solid film is heated to a second temperature which is higher than the first temperature, so that the solid film is fired, thereby forming a pattern composed of the fired solid film.
申请公布号 KR20060004903(A) 申请公布日期 2006.01.16
申请号 KR20057002890 申请日期 2005.02.21
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 NAKAGAWA HIDEO;SASAGO MASARU;HIRAI YOSHIHIKO
分类号 H01L21/027;G03C5/00;G03F7/00;G03F9/00;H01L21/302;H01L21/31;H01L21/312;H01L21/316;H01L21/44;H01L21/461;H01L21/469;H01L21/768 主分类号 H01L21/027
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