发明名称 |
ELEKTROOPTISCHER GÜTESCHALTER MIT EINKRISTALL VOM TYP LANGASIT |
摘要 |
This invention is related to an electrooptic Q-switch comprising Langasite-type structured single crystals. The Q-switch consists of a rectangular piece of langasite (LGS) single crystal (1) and a reflection element (2) located on one side of the langasite crystal and a polariser (7) on the other side of the langasite crystal. Additionally a lambda /4-plate (4) can be provided between the reflection element and the LGS crystal along the light propagation direction. The light beam which penetrates the LGS crystal along the main optical axis, is reflected by the reflection element, and passes the LGS crystal again. The advantage of this kind of electrooptic Q-switch is its low, adjustable, highly stable half-wave voltage. It overcomes the disadvantages of commercial Q-switches, such as the high, un-adjustable, low stable half-wave voltage and great half-wave voltage variation with temperature. <IMAGE>This invention is related to an electrooptic Q-switch comprising Langasite-type structured single crystals. The Q-switch consists of a rectangular piece of langasite (LGS) single crystal (1) and a reflection element (2) located on one side of the langasite crystal and a polariser (7) on the other side of the langasite crystal. Additionally a lambda /4-plate (4) can be provided between the reflection element and the LGS crystal along the light propagation direction. The light beam which penetrates the LGS crystal along the main optical axis, is reflected by the reflection element, and passes the LGS crystal again. The advantage of this kind of electrooptic Q-switch is its low, adjustable, highly stable half-wave voltage. It overcomes the disadvantages of commercial Q-switches, such as the high, un-adjustable, low stable half-wave voltage and great half-wave voltage variation with temperature. <IMAGE> |
申请公布号 |
AT314678(T) |
申请公布日期 |
2006.01.15 |
申请号 |
AT20030252841T |
申请日期 |
2003.05.07 |
申请人 |
SHANDONG UNIVERSITY |
发明人 |
WANG, JIYANG;MATERIALS, SHANDONG UNIVERSITY;YIN, XIN;SHANDONG UNIVERSITY;ZHANG, SHAOJUN;MATERIALS, SHANDONG UNIVERSITY;HU, XIAOBO;MATERIALS, SHANDONG UNIVERSITY;ZHANG, HUAIJIN;MATERIALS, SHANDONG UNIVERSITY;JIANG, MINHUA;MATERIALS, SHANDONG UNIVERSITY |
分类号 |
H01S3/115;G02F1/35;G02F1/355;H01S3/16;(IPC1-7):G02F1/00 |
主分类号 |
H01S3/115 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|