| 发明名称 |
Thick single crystal diamond layer, method for making it and gemstones produced from the layer |
| 摘要 |
A layer of single crystal CVD diamond of high quality having a thickness greater than 2 mm. Also provided is a method of producing such a CVD diamond layer. The method involves the homoepitaxial growth of the diamond layer on a low defect density substrate in an atmosphere containing less than 300ppb nitrogen. Gemstones can be manufactured from the layer. |
| 申请公布号 |
HK1057584(A1) |
申请公布日期 |
2006.01.13 |
| 申请号 |
HK20040100293 |
申请日期 |
2004.01.15 |
| 申请人 |
ELEMENT SIX (PTY) LTD. |
发明人 |
GEOFFREY ALAN SCARSBROOK;PHILIP MAURICE MARTINEAU;BARBEL SUSANNE CHARLOTTE DORN;ANDREW MICHAEL COOPER;JOHN LLOYD COLLINS;ANDREW JOHN WHITEHEAD;DANIEL JAMES TWITCHEN;RICARDO SIMON SUSSMANN |
| 分类号 |
A44C17/00;C23C16/27;C30B25/02;C30B25/10;C30B25/18;C30B29/04;H01L21/205;H01L21/3065;(IPC1-7):C30B;C23C |
主分类号 |
A44C17/00 |
| 代理机构 |
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