| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for performing microfabrication using a hard mask when manufacturing a semiconductor using a low dielectric constant insulation film for an interlayer insulating film. SOLUTION: When working a low dielectric constant insulation film 13 and an etching stopper film 12 of its lower layer by applying the low dielectric constant insulation film 13 to a semiconductor, first of all, etching of a hard mask film 14 with a resist 15a as a mask is performed and continuously, ashing is performed on the resist 15a on conditions of a temperature higher than 200°C and a pressure around 1 Torr using H<SB>2</SB>and He mixed gases. COPYRIGHT: (C)2006,JPO&NCIPI |
