| 摘要 |
PROBLEM TO BE SOLVED: To provide a vertical hall element for carrying out magnetic detection with much higher precision by suppressing the generation of any offset voltage due to position deviation(alignment deviation) due to a mask matching error at the time of manufacturing elements, and to provide a method for manufacturing it. SOLUTION: The surface of the semiconductor substrate of a hole element is formed with contact regions 14a to 14d for selectively increasing the impurity concentration of the surface, and with a trench T1e for electrically subdividing the inside of the semiconductor substrate and for forming a magnetic detector HP1. In this case, the surface of the semiconductor substrate is formed with trenches T1a to T1d so that the periphery of the contact regions 14a to 14d can be surrounded. Furthermore, the side walls of those trenches T1a to T1e are tapered. COPYRIGHT: (C)2006,JPO&NCIPI
|
