| 摘要 |
PROBLEM TO BE SOLVED: To confirm the fact that interconnect lines are formed by patterning a conductive film normally with reduced efforts. SOLUTION: The fabrication process of a semiconductor device comprises a step for forming a conductive film on an interlayer insulation film 8, a step for forming interconnect lines 10a-10c in a chip region 1a by patterning the conductive film and forming a plurality of dummy interconnect lines 31-33 in parallel with each other on a scribe line 1b, and a step for measuring the resistance between the plurality of dummy interconnect lines 31-33. Alternatively, pads 34 and 35 being connected, respectively, with the outermost dummy interconnect lines 31 and 33 are formed and the terminal of a resistance meter may be touched to the pads 34 and 35. COPYRIGHT: (C)2006,JPO&NCIPI
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