DUAL ACCESS DRAM, INTEGRATED CIRCUIT MEMORY, AND METHOD FOR OPERATION INTEGRATED CIRCUIT MEMORY HAVING PLURALITY OF DRAM SUB-ARRAYS

摘要

PROBLEM TO BE SOLVED: To provide memory architecture in which read-out or write-in from the outside of an integrated circuit can be performed by transferring or reading out data from a memory cell specified with the same address to a second DRAM subarray, or the transferring of data between unconcerned DRAM sub-arrays can be performed. SOLUTION: A dual access DRAM includes first and second sets of data lines. By adding a second set of multiplexing transistors to data lines that are controlled at timing and addressing similar to an existing set of multiplexing transistors, data can be transferred to a second subarray by an additional set of data lines. The second set of data lines are additional internal read and write lines used in addition to a normal set of data lines. The second set of data lines are designed to have a short length with correspondingly low capacitance so that additional loading on a sense amplifier is small. COPYRIGHT: (C)2006,JPO&NCIPI