发明名称 |
PN diode optical modulators fabricated in rib waveguides |
摘要 |
High speed optical modulators can be made of a reverse biased lateral PN diode formed in a silicon rib optical waveguide disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a reverse biased lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Prior art forward biased PN and PIN diode modulators have been relatively low speed devices.
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申请公布号 |
US2006008223(A1) |
申请公布日期 |
2006.01.12 |
申请号 |
US20040917204 |
申请日期 |
2004.08.11 |
申请人 |
LUXTERA, INC |
发明人 |
GUNN LAWRENCE C.III;KOUMANS ROGER;LI BING;LI GUO L.;PINGUET THIERRY J. |
分类号 |
G02B6/10 |
主分类号 |
G02B6/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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