| 发明名称 |
RESIST MATERIAL AND PATTERN FORMATION METHOD |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist material superior in transmittance with respect to exposure light having a wavelength of ≤300 nm, and in adhesion with respect to the substrate and solubility in developer. <P>SOLUTION: The resist material has a base resin containing a copolymer comprising a first unit represented by Formula (1). <P>COPYRIGHT: (C)2006,JPO&NCIPI |
| 申请公布号 |
JP2006011374(A) |
申请公布日期 |
2006.01.12 |
| 申请号 |
JP20050128359 |
申请日期 |
2005.04.26 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
KISHIMURA SHINJI;ENDO MASATAKA;SASAKO MASARU;UEDA MITSURU;IIMORI HIROKAZU;FUKUHARA TOSHIAKI |
| 分类号 |
G03F7/039;C08F220/10;C08F228/02;G03C1/492;G03F7/004;G03F7/20;H01L21/027 |
主分类号 |
G03F7/039 |
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