FORMING METHOD OF FINE PATTERN OF SEMICONDUCTOR DEVICE USING SILICON GERMANIUM SACRIFICIAL LAYER AND FORMING METHOD OF SELF-ALIGNED CONTACT USING FORMING METHOD OF THE SAME PATTERN

摘要

PROBLEM TO BE SOLVED: To provide the forming method of fine pattern of a semiconductor device using a silicon germanium sacrificial layer and the forming method of a self-aligned contact using the forming method of the same pattern.

SOLUTION: The forming method of self-aligned contact of the semiconductor device that a conductive line structure including a conductive material film, a hard mask film and a sidewall spacer, is formed on a substrate. The silicon germanium sacrificial layer (Si1-xGex) is formed at least at the same height of the conductive line structure or at a height higher than that of the structure on the entire substrate. After a photoresist pattern for limiting contact holes is formed on the sacrificial layer, the contact holes for exposing the substrate by performing dry etching on the sacrificial layer is formed. After wet etching is performed on a residual sacrificial layer following the formation of a plurality of contacts embedding the contact holes with polysilicon, a first interlayer insulating layer is formed by filling silicon oxide with the region.

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