发明名称 THIN FILM PIEZOELECTRIC RESONATOR
摘要 PROBLEM TO BE SOLVED: To obtain a thin film piezoelectric resonator having desired electrical characteristics. SOLUTION: In a manufacturing process of a thin film piezoelectric resonator 1, a piezoelectric film 4 is formed on a substrate 2 so as to cover a lower electrode 3 formed on the substrate 2, an electrode material layer 6b for forming an upper electrode 6 is then formed higher than the piezoelectric film 4, a mask of a predetermined shape is formed on the electrode material layer 6b, and the upper electrode 6 is then formed by etching the electrode material layer 6b. Before the step of forming the electrode material layer 6b, a protecting layer 5 for protecting the piezoelectric film 4 is formed to cover at least a portion, where the upper electrode 6 is not formed, of the piezoelectric film 4 when etching the electrode material layer 6b, and the electrode material layer 6b is then formed to cover the protecting layer 5. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006014381(A) 申请公布日期 2006.01.12
申请号 JP20050274489 申请日期 2005.09.21
申请人 TDK CORP 发明人 KOMURO EIKI;SAITO HISATOSHI;NOGUCHI TAKAO;IMURA MASAAKI
分类号 H03H9/17 主分类号 H03H9/17
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