<p>Apparatus and methods of fabricating an atomic layer deposited tantalum containing adhesion layer within at least one dielectric material in the formation of a metal, wherein the atomic layer deposition tantalum containing adhesion layer is sufficiently thin to minimize contact resistance and maximize the total cross-sectional area of metal, including but not limited to tungsten, within the contact.</p>
申请公布号
WO2006004927(A1)
申请公布日期
2006.01.12
申请号
WO2005US23277
申请日期
2005.06.28
申请人
INTEL CORPORATION;JOHNSTON, STEVEN, W.;SPURGIN, KERRY;PETERSON, BRENNAN, L.
发明人
JOHNSTON, STEVEN, W.;SPURGIN, KERRY;PETERSON, BRENNAN, L.