METHOD FOR MANUFACTURING LITHOGRAPHY MASK AND LITHOGRAPHY MASK

摘要

PROBLEM TO BE SOLVED: To provide a lithography mask which can suppress crystallization of ammonium sulfate when the mask is exposed by a high power exposure means such as an ArF excimer laser promoting production of foreign matter comprising ammonium sulfate, and to provide a method for manufacturing a lithography mask.

SOLUTION: A mask is cleaned by using a sulfuric acid-based detergent in a resist stripping and cleaning step (step 5) of a process of forming a half-transmitting part and in a resist stripping and cleaning step (step 10) of a process of forming a light shielding zone. The mask is then subjected to a sulfuric acid removing step for removing part or the entire surface layer portion where sulfate ion in a pattern is adsorbed so as to effectively remove the adsorbed sulfate ion.

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