| 摘要 |
<P>PROBLEM TO BE SOLVED: To realize compatibility between high exposure accuracy and high throughput. <P>SOLUTION: In step 502, shot map data are read. Then, in step 504, a mark detecting time T<SB>1</SB>and an exposure time T<SB>2</SB>when priority is given to an exposure operation are calculated on the basis of the shot map data, alignment parameter and an exposure parameter which are default set. Further, in steps 506, 508 and 512, magnitude relation is compared between a total time (T<SB>1</SB>+T<SB>W</SB>) of the mark detecting time T<SB>1</SB>and a wafer replacing time T<SB>W</SB>and the exposure time T<SB>2</SB>, and in steps 510 and 514, the alignment parameter is adjusted within a range in which the entire throughput is not reduced so that the alignment accuracy may be improved. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
