发明名称 SEMICONDUCTOR DEVICE CONTAINING RESISTOR ELEMENT AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device containing a resistor element that easily obtains a desired resistance value. SOLUTION: In the semiconductor device, a first well (3) having second conductivity which is opposite to first conductivity is formed in the first-conductivity surface layer of a semiconductor substrate. A pair of a current entrance and an exit (4 and 5) connected to the first well (3) makes current flow to the well (3) in the direction parallel to the surface of the substrate. Between the paired current entrance and the exit (4 and 5), a first-conductivity second well (9) is arranged which is made shallower than the first well (3). COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006013233(A) 申请公布日期 2006.01.12
申请号 JP20040190030 申请日期 2004.06.28
申请人 FUJITSU LTD 发明人 SUZUKI WAN;SATO SHIGEO
分类号 H01L27/04;H01L21/02;H01L21/20;H01L21/762;H01L21/822;H01L21/8222;H01L21/8234;H01L21/8248;H01L21/8249;H01L27/01;H01L27/06;H01L27/12;H01L31/0392 主分类号 H01L27/04
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