| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor composite substrate that comprises a 4H-SiC substrate and a high-quality GaN series compound semiconductor which is epitaxially grown on the 4H-SiC substrate. SOLUTION: In the semiconductor composite substrate 1, the Al<SB>1-x</SB>Ga<SB>x</SB>N (0≤x≤1) epitaxial growth layer 100 is directly formed on the main surface of the SiC monocrystalline substrate 101. The SiC monocrystalline substrate 101 is a 4H-SiC monocryatalline substrate, and the Al<SB>1-x</SB>Ga<SB>x</SB>N epitaxial growth layer has a thickness of at least 4μm. COPYRIGHT: (C)2006,JPO&NCIPI
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