| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that with respect to a display having a thin-film transistor it has been conventionally difficult to optimize the same object in the same insulating layer such as etching conditions of the same insulating layer, since the film thickness and area of an insulating layer to etch differ from each other in the same insulating layer, and moreover since the etching amount of a especially small contact hole differs from other openings even in the case of an opening. SOLUTION: A first mask is used for forming a broad area opening by etching the object of a first area. A second mask is used for forming a minute opening, that is, a contact hole by etching the above object of a second area. COPYRIGHT: (C)2006,JPO&NCIPI
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