Resistor with improved switchable resistance and non-volatile memory device

摘要

Provides a resistor with improved switchable resistance and non-volatile memory device. An example resistor includes a first electrode, a second electrode facing the first electrode and a resistance structure between the first electrode and the second electrode. The resistance structure includes an insulating dielectric material in which a confined switchable conductive region is formed between the first and second electrode. The resistor further includes a perturbation element, locally exerting mechanical stress on the resistance structure in the vicinity of the perturbation element at least during a forming process in which the confined switchable conductive region is formed.