LOWER LAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY INCLUDING NAPHTHALENE RING HAVING HALOGEN ATOM

摘要

[PROBLEMS] To provide a lower layer film forming composition for lithography to be used in a lithography process in a semiconductor device manufacture, and a lower film which has a higher dry etching speed compared with that of a photoresist and does not cause intermixing with the photoresist. [MEANS FOR SOLVING PROBLEMS] A lower layer film forming composition for lithography is characterized in that it contains a polymer having a unit structure including a naphthalene ring substituted by a halogen atom at a mole ratio of 0.3 or more in the unit structure constituting the polymer, and a solvent.