发明名称 RESIST MATERIAL AND PATTERN FORMATION METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist material superior in transmittance to exposure light, having a wavelength of &le;300 nm band, and in adhesion with respect to the substrate and solubility in developer. <P>SOLUTION: The resist material includes a base resin containing a unit represented by Formula (1), wherein R<SP>5</SP>is H, a 1-20C straight-chain alkyl group, a 1-20C branched or cyclic alkyl group, a 1-20C fluorinated alkyl group or a protecting group released by an acid; and R<SP>6</SP>is a group having a cyclic ester compound, a group having an alicyclic compound including a hydroxyl group or a group having a compound containing hexafluoroisopropyl alcohol. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006011372(A) 申请公布日期 2006.01.12
申请号 JP20050128266 申请日期 2005.04.26
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KISHIMURA SHINJI;ENDO MASATAKA;SASAKO MASARU;UEDA MITSURU;IIMORI HIROKAZU;FUKUHARA TOSHIAKI
分类号 G03F7/039;C08F228/02;G03F7/004;H01L21/027 主分类号 G03F7/039
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