| 摘要 |
PROBLEM TO BE SOLVED: To form a through-hole which connects electrically the front and back surfaces of a semiconductor substrate consisting of a ä100} silicon substrate and is normal to the a semiconductor substrate, using a very simple method. SOLUTION: A semiconductor surface opening larger than a given area is formed on the ä100} silicon substrate having a surface protective film by removing the protective film. The opening is then subjected to a laser processing to form a through-hole smaller than the given area in inner diameter, and the inner diameter of the through-hole is widened by anisotropic etching, which is finished when the inner diameter reaches the size of the given area. As a result, the through-hole of the given size is formed without crystallizing a ä111} crystal face inversely tapering from the substrate surface toward the through-hole interior. In addition, the laser processing eliminates dross or debris produced around or inside the processed hole and creates the high quality through-hole having the inner surface formed of a very smooth crystal face. COPYRIGHT: (C)2006,JPO&NCIPI |
