| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor chip generating no clap, chipping or the like in the processes of a dicing, a pickup and a carrying even in the semiconductor chip having a thin thickness of 50μm or less. SOLUTION: The manufacturing method for the semiconductor chip contains the process in which a first temperature-sensitive adhesive sheet composed of a supporter and a pressure-sensitive adhesive layer mainly comprising a side-chain crystallizable polymer formed on one surface of the supporter is stuck on the circuit surface of a semiconductor wafer, and the dicing process in which a notched trench in a depth larger than the thickness of the semiconductor chip in the case of a completion is formed to the semiconductor wafer having the stuck first temperature-sensitive adhesive sheet from the supporter side of the first temperature-sensitive adhesive sheet. The manufacturing method further contains the back-grinding process in which a reverse surface to the circuit surface of the semiconductor wafer, on which the first temperature-sensitive adhesive sheet is stuck, and to which the notched trench is formed, is ground up to the thickness of the semiconductor chip and the semiconductor chip is obtained. COPYRIGHT: (C)2006,JPO&NCIPI |
