| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor circuit which improves an ESD withstand voltage of a circuit to be protected including a bipolar transistor connected to an external connection terminal. SOLUTION: This circuit is provided with a circuit 11 to be protected and an ESD protection circuit 2 which protects the circuit 11 to be protected against an electrostatic discharge. The circuit 11 to be protected includes a bipolar transistor TR1, and an emitter of the bipolar transistor TR1 is connected to an external connection terminal 3. A current limiting element Z is provided between a collector of the bipolar transistor TR1 and a first power supply terminal 4. When a negative ESD pulse is applied to the external connection terminal 3 on the basis of a power supply voltage of the primary power supply terminal 4, the current limiting element Z limits an emitter current of the bipolar transistor TR1 and protects the bipolar transistor TR1 from breakdown. COPYRIGHT: (C)2006,JPO&NCIPI
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