| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor in which a semiconductor layer and a gate insulating film of the thin-film transistor are formed by depositing a second insulating film after continuously forming a first insulating film, and its manufacturing method. SOLUTION: The thin film transistor is composed of an insulating substrate; a poly crystal silicon layer pattern 105 and a first insulating film pattern 106, which are continuously formed on the insulating substrate and subjected to patterning; a second insulating film 107 formed on the substrate to which the poly crystal silicon layer pattern and the first insulating film pattern are formed; a gate electrode 108; an interlayer insulating film 109; and a source/drain electrode 110 which are formed on the second insulating film. The manufacturing method for the thin film transistor is also disclosed. The manufacturing method has an effect for reducing manufacturing processes since an intermediate cleaning process can be omitted. COPYRIGHT: (C)2006,JPO&NCIPI
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