WIRING STRUCTURE FOR SEMICONDUCTOR DEVICE AND ITS FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a wiring structure for a semiconductor device and its forming method. SOLUTION: The semiconductor device is provided with an interlayer dielectric arranged on a semiconductor substrate 100, first/second contact structures 181, 182 penetrating the interlayer dielectric, and a metal wiring 220 arranged on the interlayer dielectric and connected to the first/second contact structures. The first contact structure includes a first plug and a second plug 200 which are successively laminated. The second contact structure includes the second plug. COPYRIGHT: (C)2006,JPO&NCIPI