发明名称 CIRCUIT FORMATION ETCHING LIQUID FOR SEMIADDITIVE PROCESS
摘要 PROBLEM TO BE SOLVED: To provide a circuit formation etching liquid for a semiadditive process capable of dealing with the refining of circuits in recent years. SOLUTION: This copper circuit formation etching liquid for the semiadditive process essentially consists of hydrogen peroxide and sulfuric acid and further comprises azoles as an additive. Regarding the method, in a copper-clad laminate where a thin film of copper as a copper substrate layer is formed on a resin board, mask patterns for non-circuit parts are formed on the copper substrate layer by dry film resists, the board is subjected to copper plating, copper circuit patterns are produced between the mask patterns of the dry film resists, the dry film resists are removed, and each copper substrate layer in the non-circuit parts is etched to form copper circuits, thus a copper circuit board is formed. The etching for each copper substrate layer in the non-circuit parts is performed with the above etching liquid. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006009122(A) 申请公布日期 2006.01.12
申请号 JP20040191202 申请日期 2004.06.29
申请人 EBARA DENSAN LTD 发明人 MORIKAWA YOSHIHIKO;KANEKO TOMOHIRO
分类号 C23F1/18;H05K3/06;H05K3/18 主分类号 C23F1/18
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