发明名称 System for two-step resist soft bake to prevent ILD outgassing during semiconductor processing
摘要 In general, the system provides for soft baking a semiconductor wafer so that photoresist layers on the wafer are free of surface voids or craters. In particular, the system provides for manufacturing a semiconductor wafer having no photoresist craters at the completion of a two-step post-apply resist bake (soft bake) in the fabrication of an integrated circuit. In the system, the semiconductor wafer is coated with resist and then baked at both a low-bake temperature and a high-bake temperature. It is theorized that the lower temperature bake either hardens the resist layer before trapped air expands through the resist or displaces the trapped air while the resist layer remains fluid and returns to its conformal shape.
申请公布号 US2006008758(A1) 申请公布日期 2006.01.12
申请号 US20050215938 申请日期 2005.08.31
申请人 MICRON TECHNOLOGY, INC. 发明人 SHIRLEY PAUL;HALLER GORDON
分类号 A01H5/02;G03C5/00;G03F7/16;H01L21/027;H01L21/26;H01L21/324;H01L21/42;H01L21/477 主分类号 A01H5/02
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