| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor apparatus in which Si-H coupling in a switching transistor region is stable and oxygen missing is not generated in a ferroelectric oxide film in a dielectric capacitor region, and to provide a manufacturing method thereof and an electronic device utilizing the same. SOLUTION: A source-drain diffusion region 4 and a channel region 3 are formed on a polysilicon thin film formed on a substrate 1 such as a glass, and a gate electrode 6 is further formed via a gate insulating film 5. A hydrogenated silicon nitride film 11 is formed on an interlayer insulating film 8, thereby enabling to keep the hydrogen concentration of an active element region including a thin film transistor 7 for switching high, and the Si-H coupling is stabilized. Also, a ferrorelectric film 13 is provided on the film 11 via a lower electrode 12 formed of a conductive oxide film, thereby enabling to keep oxygen concentration of a ferroelectric capacitance element layer high and the generation of oxygen missing in the film 13 can be prevented. COPYRIGHT: (C)2006,JPO&NCIPI |
