| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device for reducing the CD (Critical Dimension) of a linear pattern in the peripheral region of a cell. <P>SOLUTION: A manufacturing method includes: a step of forming a silicon nitride film 201A on a substrate 200 with a cell region and a peripheral region defined; a step of forming a silicon oxynitride film 202A on the silicon nitride film as an anti-reflection coating; a step of forming a photoresist pattern 203 on the silicon oxynitride film in such a manner as to possess a width W1 wider than the linewidth W1A of a final pattern in a cell region and a minimum linewidth W2 suppressing the occurrence of the collapse of the pattern in the peripheral region; a step of performing a treatment of etching the silicon oxynitride film and the silicon nitride film using the photoresist pattern as an etching mask until such time that the linewidths W1A and W2B of the residual silicon oxynitride film 202B and the silicon nitride film 201B get narrow as compared with the linewidths W1 and W2 of the photoresist pattern; and a step of performing excessive etching of the residual silicon nitride film. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
