| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, having the effective gate length Leff fixed in the width direction for a gate electrode and an improved performance, and to provide its manufacturing method. SOLUTION: The semiconductor device comprises a support substrate 11, an insulation film 12 formed on the support substrate, a silicon island 24 of a rectangular parallelepiped shape which is formed on the insulating film and has first side faces facing each other in a first direction and second side faces facing each other in a second direction which crosses the first direction at right angles, an insulation layer 14 formed on top face of the silicon island, a gate insulation film 17 formed on the first side faces facing each other, the gate electrode 21 so formed on the insulation film as to be extended in the first direction via the gate insulation film, sidewall spacer 23 formed on both side walls of the gate electrode extending in the first direction, source and drain regions 25 and 26 formed on the second side faces, respectively, and source and drain electrodes which are formed on the second side faces, respectively and are connected to the source and drain regions, respectively. COPYRIGHT: (C)2006,JPO&NCIPI
|
