发明名称 |
Electrically programmable polysilicon fuse with multiple level resistance and programming |
摘要 |
A method to form a programmable resistor device in an integrated circuit device is achieved. The method comprises depositing a semiconductor layer overlying a substrate. The semiconductor layer is patterned to form a plurality of lines. The lines are electrically parallel between a first terminal and a second terminal. Any of the lines may be blown open by a current forced from the first terminal to the second terminal. A metal-semiconductor alloy is selectively formed overlying a first group of the lines but not overlying a second group of the lines. A method to program the programmable resistor device is described.
|
申请公布号 |
US2006006494(A1) |
申请公布日期 |
2006.01.12 |
申请号 |
US20050223069 |
申请日期 |
2005.09.09 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
WU SHIEN-YANG |
分类号 |
H01L29/00;H01L23/525;H01L27/10 |
主分类号 |
H01L29/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|