发明名称 |
Manufacturable low-temperature silicon carbide deposition technology |
摘要 |
A method of depositing silicon carbide on a substrate, including placing a substrate in a low pressure chemical vapor deposition chamber; flowing a single source precursor gas containing silicon and carbon into the chamber; maintaining the chamber at a pressure not less than approximately 5 mTorr; and maintaining the substrate temperature less than approximately 900° C. The Method also includes a method for depositing a nitrogen doped silicon carbide by the addition of nitrogen containing gas into the chamber along with flowing a single source precursor gas containing silicon and carbon into the chamber.
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申请公布号 |
US2006008661(A1) |
申请公布日期 |
2006.01.12 |
申请号 |
US20040903864 |
申请日期 |
2004.07.29 |
申请人 |
WIJESUNDARA MUTHU B;VALENTE GIANLUCA;HOWE ROGER T;PISANO ALBERT P;CARRARO CARLO;MABOUDIAN ROYA |
发明人 |
WIJESUNDARA MUTHU B.;VALENTE GIANLUCA;HOWE ROGER T.;PISANO ALBERT P.;CARRARO CARLO;MABOUDIAN ROYA |
分类号 |
B32B13/04;C23C16/32;C23C16/36;C30B29/36;H01L21/20;H01L21/205 |
主分类号 |
B32B13/04 |
代理机构 |
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地址 |
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