发明名称 ENHANCING PHOTORESIST PERFORMANCE USING ELECTRIC FIELDS
摘要 Electric fields may be advantageously used in various steps of photolithographic processes. For example, prior to the pre-exposure bake, photoresists that have been spun-on the wafer may be exposed to an electric field to orient aggregates or other components within the unexposed photoresist. By aligning these aggregates or other components with the electric field, line edge roughness may be reduced, for example in connection with 193 nanometer photoresist. Likewise, during exposure, electric fields may be applied through uniquely situated electrodes or using a radio frequency coil. In addition, electric fields may be applied at virtually any point in the photolithography process by depositing a conductive electrode, which is subsequently removed during development. Finally, electric fields may be applied during the developing process to improve line edge roughness.
申请公布号 WO2005038527(A3) 申请公布日期 2006.01.12
申请号 WO2004US32256 申请日期 2004.09.30
申请人 INTEL CORPORATION;BRISTOL, ROBERT;CAO, HEIDI;CHANDHOK, MANISH;MEAGLEY, ROBERT;RAMACHANDRARAO, VIJAYAKUMAR 发明人 BRISTOL, ROBERT;CAO, HEIDI;CHANDHOK, MANISH;MEAGLEY, ROBERT;RAMACHANDRARAO, VIJAYAKUMAR
分类号 G03F1/14;G03F7/09;G03F7/11;G03F7/16;G03F7/20;G03F7/30;G03F7/38 主分类号 G03F1/14
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