| 摘要 |
PROBLEM TO BE SOLVED: To provide a multilayer wiring structure including connection wiring with which predetermined two points belonging to different wiring layers among the multilayer wiring of a semiconductor device are connected in a reduced distance, in consideration of the fact that the connection wiring connecting the connection point of an upper layer 1 wiring to the connection point of a lower wiring 2 is not the shortest route, because a wiring lattice and a vertical connection hole have limitation in a conventional multilayer wiring structure, and to provide a method of forming the connection wiring in the multilayer wiring structure. SOLUTION: The multilayer wiring structure is provided with a first wiring, a second wiring belonging to the wiring layer different from the wiring layer to which the first wiring belongs, and a third wiring for connecting the first wiring to the second wiring. In the multilayer structure, the third wiring belongs to a different wiring layer and includes a wiring along a stereoscopic diagonal line connecting the two points positioned on different plane. Also, in a method of manufacturing a multilayer wiring structure, a process of forming the third wiring includes a process of forming a through hole along the stereoscopic diagonal line, and a process of filling a conductive material into the through hole. COPYRIGHT: (C)2006,JPO&NCIPI |
