Method of fabricating a semiconductor device

摘要

A semiconductor device capable of moderating concentration of surge current and thereby improving surge voltage resistance is proposed, the device comprising a P-well 12 formed by diffusing an impurity into a P⁺-type semiconductor substrate 10; an outer peripheral P⁺-type diffusion layer 14 formed by diffusing an impurity along the outer periphery of the P-well 12 with a concentration higher than that in the P-well; P⁺-type diffusion layers 16 formed in regions surrounded by the outer peripheral P⁺-type diffusion layers 14, by diffusing an impurity with a concentration higher than that in the P-well 12, arranged so that the centers thereof are aligned in line in one direction in a plan view, and so that every second centers thereof are aligned in line in the direction normal to the one direction; and N⁺-type diffusion layers 18 continuously formed between the outer peripheral P⁺-type diffusion layer 14 and the P⁺-type diffusion layers 16 , and between adjacent ones of the P⁺-type diffusion layers, by diffusing an impurity with a high concentration.