| 摘要 |
The invention relates to a TFA image sensor with stability-optimized photodiode for converting electromagnetic radiation into an intensity-dependent photocurrent with an intermetal dielectric, on which, in the region of the pixel matrix, a lower barrier layer is situated and a conductive layer is situated on the barrier layer, and vias being provided for the contact connection to the ASIC, the vias in metal contacts on the ASIC. A TFA image sensor having improved electrical properties is provided. This is achieved in that an intrinsic absorption layer is provided between the TCO layer and the barrier layer with a layer thickness of between 300 nm and 600 nm. Before the application of the photodiodes, the topmost, comparatively thick metal layer of the ASIC is removed and replaced by a matrix of thin metal electrodes which form the back electrodes of the photodiodes, the matrix being patterned in the pixel raster.
|
