Polysilicon structure, thin film transistor panel using the same, and manufacturing method of the same

摘要

A method for forming a polysilicon structure is provided. An amorphous silicon structure with a first amorphous silicon region and a second amorphous silicon region is formed in a first region and a second region of a substrate, respectively. The first amorphous silicon region is thinner than the second amorphous silicon region. The amorphous silicon structure is crystallized to form the polysilicon structure with a first polysilicon region and a second polysilicon region corresponding to the first amorphous silicon region and the second amorphous silicon region.