发明名称 |
Method for manufacturing of a mask blank for EUV photolithography and mask blank |
摘要 |
The invention relates to a method for manufacturing of a mask blank for extreme ultraviolet (EUV) photolithography, comprising the steps of: providing a substrate having a front surface and a back surface; depositing a film comprising tantalum nitride (TaN) on said front surface of said substrate for absorbing EUV light used during a photolithographic process; and depositing a conductive coating on said back surface of said substrate. Preferably, ion beam sputtering is used for depositing the film comprising tantalum nitride (TaN) and/or the conductive coating on the back surface of the substrate. Preferably, Xenon is used as a sputter gas for ion beam sputtering. Another aspect of the present invention relates to a mask blank for extreme ultraviolet (EUV) photolithography.
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申请公布号 |
US2006008749(A1) |
申请公布日期 |
2006.01.12 |
申请号 |
US20040885898 |
申请日期 |
2004.07.08 |
申请人 |
SOBEL FRANK;ASCHKE LUTZ;HESS GUENTER;BECKER HANS;RENNO MARKUS;SCHMIDT FRANK;GOETZBERGER OLIVER |
发明人 |
SOBEL FRANK;ASCHKE LUTZ;HESS GUENTER;BECKER HANS;RENNO MARKUS;SCHMIDT FRANK;GOETZBERGER OLIVER |
分类号 |
B32B17/06;B32B9/00;B32B15/00;G03C5/00;G03F1/00 |
主分类号 |
B32B17/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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