发明名称 PLASMA CHAMBER HAVING PLASMA SOURCE COIL AND METHOD FOR ETCHING THE WAFER USING THE SAME
摘要 <p>A plasma chamber having a plasma source coil includes a chamber body, a plasma source coil, and an edge bushing. The chamber body includes a reaction space, which is limited by a sidewall, a lower exterior wall, and an upper dome, and forms plasma. The plasma source coil arranged on the dome includes M unit coils corresponding to an integer greater than "2". The M unit coils having a predetermined turning number "n" indicative of a positive integer are extended from a center bushing having a predetermined radius at a center part, and are spirally arranged along a circumference of the center bushing, such that the plasma is formed in the reaction space. The edge bushing arranged between the dome of the chamber body and the plasma source coil, and is configured in the form of a cylindrical shape to overlap with an edge of the wafer is arranged in the reaction space.</p>
申请公布号 WO2006004259(A1) 申请公布日期 2006.01.12
申请号 WO2005KR00860 申请日期 2005.03.24
申请人 ADAPTIVE PLASMA TECHNOLOGY CORPORATION;KIM, NAM-HUN 发明人 KIM, NAM-HUN
分类号 H01L21/3065;H01J37/32;H01L21/311;(IPC1-7):H01L21/306 主分类号 H01L21/3065
代理机构 代理人
主权项
地址