发明名称 |
CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION FOR SHALLOW TRENCH ISOLATION PROCESS OF SEMICONDUCTOR |
摘要 |
<p>The present invention is related to a chemical-mechanical polishing slurry for shallow trench isolation, more concretely, to a chemical-mechanical polishing slurry comprising an aqueous abrasive solution comprised of deionized water, polishing particles, and a polishing particle dispersant; and an aqueous additive solution comprised of a carboxylic acid polymer compound, a nitrogen-containing organic cyclic compound, and an amine-group compound. The removal selectivity of the slurry may be improved by significantly lowering the speed of polishing of nitride film by adding a nitrogen-containing organic cyclic compound to an acrylic acid polymer compound, and by increasing the speed of removal of silicon oxide film by adding an amine- group compound, which is an accelerator of hydrolysis of silicon oxide film.</p> |
申请公布号 |
WO2006004258(A1) |
申请公布日期 |
2006.01.12 |
申请号 |
WO2005KR00859 |
申请日期 |
2005.03.24 |
申请人 |
HANWHA CHEMICAL CORPORATION;NAM, HO-SEONG;LEE, JIN-SEO;AHN, GUI-RYONG |
发明人 |
NAM, HO-SEONG;LEE, JIN-SEO;AHN, GUI-RYONG |
分类号 |
C09G1/02;C09K3/14;H01L21/3105;(IPC1-7):C09K3/14 |
主分类号 |
C09G1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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