| 摘要 |
A semiconductor device having a semiconductor substrate, an interlayer insulating layer formed on the substrate and having a contact hole partially exposing the substrate, and a diffusion barrier formed on the interlayer insulating layer and in the contact hole. The diffusion barrier comprises a plurality of TaSiN thin films. The present invention advantageously provides a semiconductor device with enhanced step coverage and reduced resistivity of a TaSiN layer. |
