| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory device of which the deterioration caused by fatigue and inprint is reduced. SOLUTION: The ferroelectric memory device is chacterized by being provided with; a first n-type MOS transistor having a word line connected to a gate thereof; a ferroelectric capacitor having one end connected to a bit line through the first n-type MOS transistor and having the other end connected to a plate line; and a plate line control circuit for driving the plate line. The plate line control circuit is provided with; an inverter which has a first p-type MOS transistor and a second n-type MOS transistor and has an output end connected to the plate line; a voltage source for supplying a voltage supplied to the source of the first p-type MOS transistor; and a third n-type MOS transistor provided between a voltage source and the output end. COPYRIGHT: (C)2006,JPO&NCIPI
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