发明名称 THERMAL CVD SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a thermal CVD (Chemical Vapor Deposition) system where, even in the case the size of a substrate is enlarged, the thickening of an infrared transmission window installed between a heating means and the substrate for maintaining its strength to the atmospheric pressure is prevented, and the increase of the cost can be suppressed. SOLUTION: The inside of a vacuum chamber 2 is separated into a side at which a substrate 5 is installed by a quartz glass 3 as an infrared penetration window and a side at which a plurality of infrared lamps 8 for heating the substrate 5 are installed; during a film deposition process, a gaseous mixture of carbon monoxide and gaseous hydrogen as a gaseous starting material is introduced into the lower chamber 2a in the chamber on the side of the substrate 5; further, gaseous argon as inert gas is introduced into the upper chamber 2b in the chamber on the side of the infrared lamps 8; and also, sluice valves 15, 19 are opened, and control is performed in such a manner that the pressure of the lower chamber 2a in the chamber and the pressure of the upper chamber 2b in the chamber are made almost the same. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006009073(A) 申请公布日期 2006.01.12
申请号 JP20040185930 申请日期 2004.06.24
申请人 ULVAC JAPAN LTD 发明人 AGAWA YOSHIAKI;MIURA OSAMU;KIKUCHI MASASHI;OGATA HIDEYUKI;OBA MASATOSHI;HARA YASUHIRO;MURAKAMI HIROHIKO
分类号 C23C16/46 主分类号 C23C16/46
代理机构 代理人
主权项
地址