| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate for compound semiconductor growth where the quality of a compound semiconductor can be upgraded. SOLUTION: A porous Si single crystal layer 4 where holes are open to an outer direction and which is coated with a 3C-SiC single crystal layer 3 having a surface thickness of 0.1-100 nm is formed on an Si single crystal substrate 2. COPYRIGHT: (C)2006,JPO&NCIPI
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