Monomers for photoresists bearing acid-labile groups of reduced optical density

摘要

Monomers and polymers useful for forming photoresists are provided. More particularly, photoresists, as well as monomers and polymers for photoresists useful in micro-lithography, specifically monomers bearing acid-labile groups of reduced optical density. The resulting photoresists exhibit improved transparency to 157 nm light. The photoresist compositions are composed of a mixture of at least one water insoluble, acid decomposable polymer which is prepared from at least one monomeric unit which comprises an acid labile group of the formula -OC(CH₃)₂CF₃ and which is substantially transparent to ultraviolet radiation at a wavelength of about 157 nm and at least one photoacid generator capable of generating an acid upon exposure to sufficient activating energy at a wavelength of about 157 nm.