| 摘要 |
<p>Producing a halftone phase mask involves providing a mask on a chromium oxide or chromium mask layer, etching chromium oxide or chromium mask layer to form a hard mask in a first etching step, and selectively etching a refractory metal silicon nitride phase shifter layer using the hard mask in a plasma with a chlorine- and/or hydrogen-chloride-containing main gas in a second etching step with a predetermined cathode power of at least 20 W. Production of a halftone phase mask having a silicon dioxide substrate (1), an overlying refractory metal silicon nitride (SixNy) phase shifter layer, and an overlying chromium oxide or chromium mask layer involves providing a mask on the chromium oxide or chromium mask layer (3), etching chromium oxide or chromium mask layer to form a hard mask from the chromium oxide or chromium mask layer in a first etching step, and selectively etching the refractory metal SixNy phase shifter layer (2) using the hard mask in a plasma with a chlorine-containing and/or hydrogen-chloride-containing main gas in a second etching step with a predetermined cathode power of at least 20 W.</p> |
