SILICON SINGLE CRYSTAL MANUFACTURING METHOD AND APPARATUS

摘要

A silicon single crystal manufacturing method by using the FZ method characterized in that the conductivity type and the resistivity of polycrystalline silicon to be used as a material rod are previously measured, the conductivity type, concentration, the gas flow rate of the dopant gas are determined so that the resistivity of a single crystal manufactured by reference to the measured values may be a desired value, and the thus determined dopant gas is used for gas-doping the single crystal is disclosed. A silicon single crystal manufacturing method by using the FZ method characterized in that an inert gas is introduced from above the FZ fusing unit and exhausted from below, gas doping is conducted while spraying gas containing a dopant to the fusing unit by means of a nozzle near the fusing unit, and thus a silicon single crystal is manufactured and a silicon single crystal manufacturing apparatus are also disclosed. Thus, methods and apparatus for manufacturing a silicon single crystal efficiently and safely even if the silicon single crystal has a resistivity of a desired value, especially of 3,000 O·cm or more.